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| H11AG1M Phototransistor Optocoupler October 2007 H11AG1M Phototransistor Optocoupler Features High efficiency low degradation liquid epitaxial IRED Logic level compatible, input and output currents, tm Description The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications. with CMOS and LS/TTL High DC current transfer ratio at low input currents (as low as 200A) Underwriters Laboratory (UL) recognized File #E90700, Volume 2 IEC 60747-5-2 approved (ordering option V) Applications CMOS driven solid state reliability Telephone ring detector Digital logic isolation Schematic ANODE 1 6 BASE 6 CATHODE 2 5 COL 1 6 1 6 N/C 3 4 EMITTER 1 (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com H11AG1M Phototransistor Optocoupler Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR PD IC Storage Temperature Operating Temperature Parameters Value -55 to +150 -40 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 150 2.0 50 Units C C C mW mW/C mA V A mW mW/C mW mW/C mA Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ 25C (LED plus detector) Derate Linearly From 25C Continuous Forward Current Reverse Voltage Forward Current - Peak (1s pulse, 300pps) LED Power Dissipation 25C Ambient Derate Linearly From 25C Detector Power Dissipation @ 25C Derate Linearly from 25C Continuous Collector Current (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 2 H11AG1M Phototransistor Optocoupler Electrical Characteristics (TA = 25C unless otherwise specified.) Individual Component Characteristics Symbol EMITTER VF IR CJ DETECTOR BVCEO BVCBO BVECO ICEO CCE Breakdown Voltage, Collector to Emitter Collector to Base Emitter to Collector Leakage Current, Collector to Emitter Capacitance IC = 1.0mA, IF = 0 IC = 100A, IF = 0 IC = 100A, IF = 0 VCE = 10V, IF = 0 VCE = 10V, f = 1MHz 30 70 7 5 10 10 V V V A pF Input Forward Voltage Reverse Leakage Current Capacitance IF = 1mA VR = 5V, TA = 25C V = 0, f = 1.0MHz 1.25 1.5 10 100 V A pF Parameters Test Conditions Min. Typ.* Max. Units *Typical values at TA = 25C. Isolation Characteristics Symbol VISO RISO Parameter Input-Output Isolation Voltage Isolation Resistance Test Conditions f = 60Hz, t = 1 sec. VI-O = 500VDC, TA = 25C Min. 7500 1011 Typ.* Max. Units VACPEAK Transfer Characteristics (TA = 25C Unless otherwise specified.) Symbol CTR Characteristics Current Transfer Ratio Test Conditions IF = 1mA, VCE = 5V IF = 1mA, VCE = 0.6V IF = 0.2mA, VCE = 1.5V Min. 300 100 100 Typ.* Max. Units % DC CHARACTERISTICS VCE(SAT) Saturation Voltage IF = 2.0mA, IC = 0.5mA .40 V AC CHARACTERISTICS Non-Saturated Switching Times ton toff Turn-On Time Turn-Off Time RL = 100, IF = 1mA, VCC = 5V RL = 100, IF = 1mA, VCC = 5V 5 5 s s *Typical values at TA = 25C (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 3 H11AG1M Phototransistor Optocoupler Typical Performance Curves Figure 1. LED Forward Voltage vs. Forward Current 2.0 Figure 2. Normalized Current Transfer Ratio vs. Forward Current 1.2 1.8 VF - FORWARD VOLTAGE (V) 1.0 1.6 NORMALIZED CTRCE 0.8 1.4 TA = -55 C TA = 25 oC T A = 100 oC o 0.6 1.2 0.4 NORMALIZED TO: I F = 5mA VCE = 5V o TA = 25 C 1 10 100 1.0 0.2 0.8 0.1 1 10 100 0.1 I F - LED FORWARD CURRENT (mA) IF - FORWARD CURRENT - mA Figure 3. Normalized CTR vs. Temperature 1.6 1.4 1.2 NORMALIZED TO: I F = 5mA V = 5V CE Figure 4. Normalized Collector vs. Collector - Emitter Voltage NORMALIZED ICE - COLLECTOR - EMITTER CURRENT 10 I F = 10mA TA = 25 C o NORMALIZED CTR CE 1.0 0.8 I F = 1mA 0.6 I F = 0.5mA 0.4 0.2 0.0 -60 I F = 0.2mA I F = 10mA I F = 2mA I F = 5mA 1 I F = 5mA I F = 2mA 0.1 I F = 1mA I F = 0.5mA I F = 0.2mA 0.01 0.001 NORMALIZED TO: I F = 5mA VCE = 5V TA = 25 o C -40 -20 0 20 40 60 o 80 100 0.0001 0.1 1 VCE - COLLECTOR - EMITTER VOLTAGE - V 10 TA - AMBIENT TEMPERATURE - C NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current 30 Figure 6. Normalized Collector - Base Current vs. Temperature 10 NORMALIZED COLLECTOR - BASE CURRENT 25 I F = 10mA 1 I F = 5mA I F = 2mA I F = 1mA 0.1 I F = 0.5mA 20 15 10 NORMALIZED TO: I F = 5mA VCB = 5V TA = 25 o C I F = 0.2mA 0.01 NORMALIZED TO: IF = 5mA VCB = 5V o TA = 25 C -40 -20 0 20 40 60 o 5 0 0 10 20 30 40 50 60 70 80 90 100 0.001 -60 80 100 IF - FORWARD CURRENT - mA TA - AMBIENT TEMPERATURE - C (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 4 H11AG1M Phototransistor Optocoupler Typical Performance Curves (Continued) Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature 10000 1000 I F = 0mA VCE = 10V ICEO - DARK CURRENT (nA) 100 10 1 0.1 0 10 20 30 40 50 60 70 80 90 100 TA - AMBIENT TEMPERATURE ( oC) 3V VCC 10V 47K R1 H11AG1M AC INPUT VOLTAGE 1N4148 C1 4093 or 74HC14 Input 40-90 VRMS 20Hz 95-135 VRMS 60Hz 200-280 VRMS 50/60Hz R1 75K 1/10W 180K 1/10W 390K 1/4W C1 0.1F 100V 12 F 200 V 6.80 F 400 V Z 109K 285K 550K 4.7M C2 0.1 4.7K DC component of input voltage is ignored due to C1 Figure 8. Telephone Ring Detector/A.C. Line CMOS Input Isolator The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing requirements. (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 5 H11AG1M Phototransistor Optocoupler Package Dimensions Through Hole 0.350 (8.89) 0.320 (8.13) Pin 1 ID Surface Mount 0.350 (8.89) 0.320 (8.13) PIN 1 ID 0.260 (6.60) 0.240 (6.10) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) SEATING PLANE SEATING PLANE 0.070 (1.77) 0.040 (1.02) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.012 (0.30) 0.008 (0.20) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.035 (0.88) 0.006 (0.16) 0.4" Lead Spacing 0.350 (8.89) 0.320 (8.13) PIN 1 ID Recommended Pay Layout for Surface Mount Leadform 0.070 (1.78) 0.260 (6.60) 0.240 (6.10) 0.060 (1.52) 0.070 (1.77) 0.040 (1.02) SEATING PLANE 0.014 (0.36) 0.010 (0.25) 0.415 (10.54) 0.100 (2.54) 0.295 (7.49) 0.200 (5.08) 0.115 (2.93) 0.030 (0.76) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters) (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 6 H11AG1M Phototransistor Optocoupler Ordering Information Suffix No Suffix S SR2 T V TV SV SR2V Example H11AG1M H11AG1SM H11AG1SR2M H11AG1TM H11AG1VM H11AG1TVM H11AG1SVM H11AG1SR2VM Surface Mount Lead Bend Option Standard Through Hole Device (50 units per tube) Surface Mount; Tape and Reel (1,000 units per reel) 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel) Marking Information 1 H11AG1 V 3 4 2 6 X YY Q 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 7 H11AG1M Phototransistor Optocoupler Tape Dimensions 12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3 0.1 MAX 10.1 0.20 O1.5 0.1/-0 User Direction of Feed Note: All dimensions are in inches (millimeters) Reflow Soldering Profile 300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec Time above 183C = 90 Sec 1.822C/Sec Ramp up rate 33 Sec 60 120 180 270 360 Time (s) (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 8 H11AG1M Phototransistor Optocoupler TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation H11AG1M Rev. 1.0.1 www.fairchildsemi.com 9 |
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